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20 years pioneering research of static induction devices (SID)


1986,41. He Shanhu r Li Siyuan. Lishou Song. And so on. Micron lithography research ER]. National scientific and technological research achievements communique I99l. 10. No891988.43. Zhang Qi, Li Siyuan. Declared meritorious deeds, and so on. Thin layer of silane synchronous extension of R1. Semiconductor technology. 1988, (3): 25. Li Siyuan Zhang Jun,mulberry danmark, et al. Silt, synchronization epitaxial the SIT electrical parameters [J]. Lanzhou University (Natural Science), 1989.25 (2) 149 54 school withdrawal. Li Siyuan, Jia Xiaotian. Yin, et al. Platinum one of silicon composite interfacial reactions and electrical properties of electrode-j]. Applied science school withdrawal, 1988,6 (1): 78 ~ 85 spider, such as spider spider the State spider spider states suddenly Chun. Delete spider gamma spider spider grieved spider spider spider ln a} _r! A rlu_}; [11 11 [(3) led thinking deep: 2O years of electrostatic induction din pieces (S-II)) of the pioneering research 55E52] [ ,],[The A1P Bu system electrical properties and the SID [J]. Journal of Applied Sciences +199. , 8 (2): 30 ~ 37. Liu Su, Li Siyuan. Power SITH dynamic testing principle and calculate the square j hit the mouth. Power Electronics, 1994, (2) 47. LiuS,ralph lauren outlet, USYtYangJH. Themeasurementprincleandcalculatingmethodofthedyna miccharacter-isticofpowerSITH [A]. ProeIPEMC'94 [c] +1,181. Liu Su, Li Siyuan + Corning. The SITH dynamic parameters of the test method]. Communique of Gansu Province scientific and technological research achievements, 1991,73.36. Tang Jinke + Lishou Song, Zhang,zapatos mbt, et al. Power parameters of microwave power transistor testing system [R]. National science and technology research bulletin, 1991,10 t42. Li Siyuan, Wang Yuzhen + with the army, and so on. Oxygen annealing characteristics of non-gold and gold doped Si / Si interface port]. Physics, 1985,34 (6): 715. Li Siyuan, Yin Ping Jiang} Yong. Fixed charge of interface states and electron spectroscopy of gold doped Si / SiOz interface [J]. Semiconductor technology, 1983 + (3): 54. Li Siyuan Wang Yuzhen, Jia Xiaotian. Yang sensing devices developed]. Lanzhou Science and Technology Information,mulberry tasker, 1990, (3): 5 Liu Su, Pantai Guang, and Li Siyuan, and so on. Development of the BSIT energy saving electronic ballast JR]. Gansu Province science and technology research communiques, 1991 +73,37. Corning, Liu Su,. SITH tune the optical and electronic current controller developed from JR. Gansu Province scientific and technological research achievements Bulletin, 1991, (73): 39. PioneeringStudyonStaticInductionDevices (SID) inPast2t1YearsLiSiyuan (ResearchInstitute. {StaticInductionDevices.LanzhouUni-~ erskylDepartment. FPhysics,scarpe mbt outlet, LanzhouUniversitytLanzhou, 730000, China) Abstract: ThepioneeringachievementsofourinstituteonSIDresear charesummeduphere. Theyareasfo1lows} ThetheoreticalstudiesonthephysicsofSID, thedevicestructures, con-trolofthedeetricalperformance, thekeymanufacturingtechnologies, thedevelopmentofnewvarietiesofproductsofSIDandpart ialapplicationsoftheseSID. etc. Keywords: staticinductiondevice; SID; pioneeringstuay